Interface Characteristics between Au Electrode and Pentacene Layer in Organic Thin-film Transistors
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概要
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In order to investigate interfacial characteristics between top-Au and pentacene layers, devices with the structure of bottom-Au/pentacene/top-Au were fabricated on glass substrates at various deposition rates of top-Au of about 1.0, 3.0 and 15.0 Å/s. It was observed that electrical characteristics could be improved by increasing the deposition rate of top-Au, and the highest electrical conductivity value, $1.5\times 10^{-6}$ S/cm, was obtained for the device with top-Au deposited at 15.0 Å/s. Auger electron spectroscopy (AES) results showed that the atomic content of Au is substantially increased with the deposition rate of top-Au, but there is no marked difference in the depth profile of Au atoms regardless of the deposition rate of top-Au. Likewise, field-emission scanning electron microscopy (FE-SEM) images did not reveal structural defects that might cause short circuit. We also fabricated top-contact organic thin-film transistors (OTFTs) at various deposition rates of the Au layer for source/drain electrodes. As a result, the performance of the OTFTs can be modified by the deposition rate of Au. These results will be discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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Jang Sun
Department Of Electrical Information And Control Engineering Hongik University
-
Choi Jong
Department Of Archaeology Kyongnam Archaeology Institute
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Kang Sung
Department Of Biological Science Kongju National University
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Park Jaehoon
Department of Electrical, Information and Control Engineering, Hongik University, 72-1 Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
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Kang Sung
Department of Electrical, Information and Control Engineering, Hongik University, 72-1 Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
-
Jang Sun
Department of Electrical, Information and Control Engineering, Hongik University, 72-1 Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
-
Choi Jong
Department of Electrical, Information and Control Engineering, Hongik University, 72-1 Sangsu-dong, Mapo-gu, Seoul 121-791, Korea
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