Characteristic Variations of Graphene Field-Effect Transistors Induced by CF4 Gas
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概要
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The influence of tetrafluoromethane (CF4) gas on the electrical characteristics of monolithic graphene field-effect transistors (FETs) is reported. Compared with the results in nitrogen ambient, FETs in CF4 ambient exhibit a positive shift in the Dirac point voltage and an increase in drain current. These changes are ascribed to the electronegative nature of the fluorine atoms in CF4 gas, which is found to induce p-type doping and excess charge carriers in graphene. The electrical response to CF4 gas exposure demonstrates the feasibility of using monolithic graphene FETs as chemical sensors.
- 2012-08-25
著者
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Choi Jong
Department Of Archaeology Kyongnam Archaeology Institute
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Baek Kyu-Ha
RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Park Jaehoon
RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Do Lee-Mi
RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Imamura Hiroshi
Nanosystem Research Institute (NRI), Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Imamura Hiroshi
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Jeong Ye-Sul
RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Park Kun-Sik
RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Lee Bong
RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Kim Dong-Pyo
RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Ryu Jin-Hwa
RFID/USN Research Department, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Yase Kiyoshi
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Choi Jong
Department of Electrical, Information and Control Engineering, Hongik University, Seoul 121-791, Korea
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