Properties of Highly Oriented Rare-Earth-Ion-Substituted BaNb2O6 Thin Films Synthesized by Chemical Solution Deposition
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概要
- 論文の詳細を見る
Highly oriented (Ba,Ln)Nb2O6 [Ln: Gd, Ho, Er] thin films have been synthesized by a chemical solution deposition (CSD) method. Homogeneous and stable (Ba,Ln)Nb2O6 precursor solutions were prepared by controlling the reaction of metalorganic compounds in solution. Gd-, Ho- and Er-substituted BaNb2O6 powders and thin films, such as Ba0.75Gd0.167Nb2O6 (BGN75), Ba0.66Gd0.22Nb2O6 (BGN66), Ba0.66Ho0.22Nb2O6 (BHN66) and Ba0.66Er0.22Nb2O6 (BEN66), crystallized in the tetragonal tungsten bronze phase below 800°C. The synthesized BGN75, BGN66, BHN66 and BEN66 thin films on Pt(100)/MgO(100) had a prominent $00l$ preferred orientation and exhibited the diffuse phase transition of dielectric constant-temperature ($\varepsilon$-$T$) curves. The Curie temperatures of the (Ba,Ln)Nb2O6 films depended upon the ionic radii of the substituted rare earth ions. The BHN66 and BEN66 thin films on Pt(100)/MgO(100) showed typical ferroelectric hysteresis loops at room temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Mizuno Masanari
Department Of Applied Chemistry Graduate School Of Engineering Nagoya University
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Kikuta Koichi
Department Of Applied Chemistry Graduate School Of Engineering Nagoya University
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Hirano Shin-ichi
Department Of Applied Chemistry Graduate School Of Engineering Nagoya University
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Yamaguchi Toshiaki
Department Of Anesthesiology Yamanashi Medical University
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Sakamoto Wataru
Center For Integrated Research In Science And Engineering Nagoya University
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