Ferroelectric Thin Films Prepared by Backside Pulsed Ion-Beam Evaporation

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概要

• 論文の詳細を見る

• Ferroelectric (PbTiO3 or Pb(Zr, Ti)O3) thin films have been successfully prepared on Si(100) or pyrex glasses by backside deposition of intense pulsed ion beam evaporation. The ion beam parameters were typically as follows: $\text{beam energy}=1.3$ MeV, ion-current density on $\text{target}=0.7$ kA/cm2 and $\text{pulse duration}=50$ ns. The composition of the thin films was in good agreement with that of the original target. The relative dielectric constant at 1 kHz was obtained to be 20, while that obtained by normal front side deposition was 150.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-02-28

著者

• Yatsui Kiyoshi

  Extreme Energy Density Research Institute Nagaoka University Of Technology

• Maehama Takehiro

  Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of The Rykyus

• Yatsui Kiyoshi

  Extreme Energy-Density Research Institute, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan

• Maehama Takehiro

  Department of Electrical and Electronic Engineering, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan

• Sonegawa Tomihiro

  Department of Electrical and Electronic Engineering, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan

• Jiang Weihua

  Extreme Energy Density Research Institute, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan

• Sonegawa Tomohiro

  Department of Electrical and Electronic Engineering, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan

• Arakaki Toshiki

  Department of Electrical and Electronic Engineering, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan

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