Phase Transition Characteristics and Nonvolatile Memory Device Performance of ZnxSb100-x Alloys
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概要
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We propose ZnxSb100-x alloys as a phase-change material for application in nonvolatile memory, phase-change random access memory (PRAM). The ZnxSb100-x alloys showed electrical switching between amorphous and crystalline states and their amorphous state showed sheet resistances $10^{4}$-fold higher than that of the crystalline state in 100 nm ZnxSb100-x films. Zn doping reinforced the amorphous stability of the ZnxSb100-x alloys, which adjusted their switching characteristics. Increasing the concentration of Zn increased the crystallization temperature of the ZnxSb100-x alloys. PRAM ($\lambda = 0.5$ μm) using the Zn17Sb83 film presented reversible program performances between set and reset. The minimum time for set switching was 140 ns and the required current for reset switching was 9.6 mA in Zn17Sb83 PRAM.
- 2007-06-25
著者
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Yu Byoung
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Yoon Sung
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Choi Kyu
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Lee Nam
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Choi Se
School Of Materials Science And Engineering Yonsei University
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Kim Dae
School Of Biotechnology And Bioengineering Kangwon National University
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Park Sung
School Of Biological Sciences And Institute Of Microbiology Seoul National University
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Park Tae
Department Of Biological Science Korea Advanced Institute Of Science And Technology
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Park Sung
School of Materials Science and Engineering, Yonsei University, Seoul 120749, Korea
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Park Tae
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, U.S.A.
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