Effects of Hf Incorporation on Negative Bias-Illumination Stress Stability in Hf--In--Zn--O Thin-Film Transistors

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概要

• 論文の詳細を見る

• In this study, highly reliable amorphous oxide semiconductor-based thin-film transistors (TFTs) were developed. The Hf concentration was systematically changed in the Hf-incorporated In--Zn--O (HIZO) TFTs, and Hf played an important role in determining the negative bias-illumination instability. The process parameters were optimized in order to obtain HIZO TFTs with an excellent stability. HIZO can be processed on a 6-in. wafer at low temperatures and is almost transparent in the visible range. Thus this material is promising for use in current TFTs as well as future transparent electronic device components with good electrical performance and excellent stability.

• 2013-04-25

著者

• Kim Dae

  School Of Biotechnology And Bioengineering Kangwon National University

• Park Jae

  Samsung Advanced Institute of Technology (SAIT), Yongin, Gyeonggi 446-712, Korea

• Kim Sangwook

  Samsung Advanced Institute of Technology (SAIT), Yongin, Gyeonggi 446-712, Korea

• Lee Jang-Sik

  Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Korea

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• Effects of Hf Incorporation on Negative Bias-Illumination Stress Stability in Hf--In--Zn--O Thin-Film Transistors

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