Phase Transition Characteristics and Device Performance of Sn-doped Ge2Sb2Te5 in Phase Change Random Access Memory
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概要
- 論文の詳細を見る
Sn was employed in Ge2Sb2Te5 to accelerate operation speed of phase change random access memory (PRAM). Crystallized Sn-doped Ge2Sb2Te5 showed face centered cubic (fcc) or hexagonal close packed (hcp) structures upon heat treatment, which was similar to that of Ge2Sb2Te5. However, Sn doping increased the phase transformation temperature to hcp of Ge2Sb2Te5. 17 at. % Sn-doped Ge2Sb2Te5 had an accelerated crystallization under laser irradiation and moreover, showed decreased operation time of PRAM compared to that of Ge2Sb2Te5. In addition, 17 at. % Sn-doped Ge2Sb2Te5 showed stable and reversible device performance.
- 2006-12-25
著者
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Yu Byoung
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Yoon Sung
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Choi Kyu
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Lee Nam
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Choi Se
School Of Materials Science And Engineering Yonsei University
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PARK Tae
School of Materials Science and Engineering, Yonsei University
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Kim Dae
School Of Biotechnology And Bioengineering Kangwon National University
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Yoon Sung
Electronics and Telecommunications Research Institute, Daejeon 305700, Korea
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Kim Dae
School of Materials Science and Engineering, Yonsei University, Seoul 120749, Korea
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Yu Byoung
Electronics and Telecommunications Research Institute, Daejeon 305700, Korea
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Choi Kyu
Electronics and Telecommunications Research Institute, Daejeon 305700, Korea
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Choi Se
School of Materials Science and Engineering, Yonsei University, Seoul 120749, Korea
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