AIGaAs/InGaAs Pseudomorphic Doped Channel Field Effect Transistor with A P-AlAs Buffer Layer Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-05-15
著者
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Kim Dae
School Of Electrical Engineering And Inter-university Semiconductor Research Center(isrc) Seoul Nati
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Chung Youn
School Of Electrical Engineering And Inter-university Semiconductor Research Center(isrc) Seoul Nati
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CHOI Seung
School of Electrical Engineering, Korea University
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Seo Kwang
School Of Electrical Engineering And Computer Science Seoul National University
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Seo Kwang
School Of Electrical Engineering And Inter-university Semiconductor Research Center(isrc) Seoul Nati
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Choi Seung
School Of Electrical Engineering And Inter-university Semiconductor Research Center(isrc) Seoul Nati
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CHU Hyung
School of Electrical Engineering and Inter-university Semiconductor Research Center(ISRC), Seoul Nat
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Chu Hyung
School Of Electrical Engineering And Inter-university Semiconductor Research Center(isrc) Seoul Nati
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Kim Dae
School Of Biotechnology And Bioengineering Kangwon National University
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- AIGaAs/InGaAs Pseudomorphic Doped Channel Field Effect Transistor with A P-AlAs Buffer Layer Grown by Metalorganic Chemical Vapor Deposition
- Low Doped P-Type AlGaAs Buffer Layers Grown by Metalorganic Chemical Vapor Deposition Using Intrinsic Carbon Doping Method
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