Phase Transition Characteristics and Device Performance of Sn-doped Ge_2Sb_2Te_5 in Phase Change Random Access Memory
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-12-25
著者
-
Yu Byoung
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
-
Yu Byoung
Electronics And Telecommunications Res. Inst. Daejeon Kor
-
Yoon Sung
Electronics And Telecommunications Res. Inst. Daejeon Kor
-
Choi Kyu
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
-
Choi Kyu
Electronics And Telecommunications Res. Inst. Daejeon Kor
-
Lee Nam
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
-
Lee Nam
Electronics And Telecommunications Res. Inst. Daejeon Kor
-
Kim Dae
School Of Electrical Engineering And Inter-university Semiconductor Research Center(isrc) Seoul Nati
-
Choi Se
School Of Materials Science And Engineering Yonsei University
-
Yu Byoung
Electronics And Telecommunications Research Institute
-
PARK Tae
School of Materials Science and Engineering, Yonsei University
-
Yoon Sung
Electronics And Telecommunications Research Institute
関連論文
- Phase Transition Characteristics and Device Performance of Sn-doped Ge_2Sb_2Te_5 in Phase Change Random Access Memory
- Stress Reduction of Ge_2Sb_2Te_5 by Inhibiting Oxygen Diffusion
- Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)
- Highly Reliable Flash Cell for Low Power Application
- Ischemia-Related Changes in Galanin Expression in the Dentate Hilar Region after Transient Forebrain Ischemia in Gerbils
- The Essential Oil from Angelica gigas NAKAI Suppresses Nicotine Sensitization(Pharmacology)
- Fully Embedded Low Temperature Co-fired Ceramics (LTCC) Spiral Inductors for L-Band RF System-in-Package (SIP) Applications
- AIGaAs/InGaAs Pseudomorphic Doped Channel Field Effect Transistor with A P-AlAs Buffer Layer Grown by Metalorganic Chemical Vapor Deposition
- Phase Transition Characteristics and Nonvolatile Memory Device Performance of ZnxSb100-x Alloys
- Phase Transition Characteristics and Device Performance of Sn-doped Ge2Sb2Te5 in Phase Change Random Access Memory
- A performance evaluation of the variable demodulator based on the DVB-RCS for Satellite Communication System (衛星通信)
- Nanostructures of ZnO Prepared by Direct-Current Magnetron Sputtering Technique