Highly Reliable Flash Cell for Low Power Application
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-30
著者
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Yu Byoung
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Yoon Sung
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Ryu Sang
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Park Young
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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PARK Young
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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CHOI Yong
System LSI Division, Samsung Electronics Co.
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KANG Sung
System LSI Division, Samsung Electronics Co.
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HAN Jeong
System LSI Division, Samsung Electronics Co.
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YOON Seung
System LSI Division, Samsung Electronics Co.
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CHUNG Chil
System LSI Division, Samsung Electronics Co.
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YOON Sung
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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RYU Sang
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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YU Byoung
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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Yoon Seung
System Lsi Division Samsung Electronics Co.
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Chung Chil
System Lsi Division Samsung Electronics Co.
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Han Jeong
System Lsi Division Samsung Electronics Co.
関連論文
- Phase Transition Characteristics and Device Performance of Sn-doped Ge_2Sb_2Te_5 in Phase Change Random Access Memory
- Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)
- Highly Reliable Flash Cell for Low Power Application
- Highly Reliable Flash Cell for Low Power Application