Highly Reliable Flash Cell for Low Power Application
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概要
- 論文の詳細を見る
The electrical properties of a split-gate-type flash cell are investigated and optimized by junction engineering to obtain a high reliability. Phosphorus implantation is conducted to form a cell source junction, and the following three different anneal conditions change voltage coupling ratio between the source and the floating gate. As the ratio increases, it is observed that program characteristic is improved and endurance property is degraded, which matches well with simulation result. Therefore, cells in the pure N2 group are considered to be optimized cells. Optimized cells guarantee $10^{5}$ cycle endurance, and show excellent program disturbance and bake retention properties.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-15
著者
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PARK Young
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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CHOI Yong
System LSI Division, Samsung Electronics Co.
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KANG Sung
System LSI Division, Samsung Electronics Co.
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YOON Sung
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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RYU Sang
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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YU Byoung
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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Yoon Seung
System Lsi Division Samsung Electronics Co.
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Chung Chil
System Lsi Division Samsung Electronics Co.
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Han Jeong
System Lsi Division Samsung Electronics Co.
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Yoon Sung
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea
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Ryu Sang
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea
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Yu Byoung
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Korea
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Yoon Seung
System LSI Division, Samsung Electronics Co., Yongin, Gyeonggi-do, 449-711, Korea
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Han Jeong
System LSI Division, Samsung Electronics Co., Yongin, Gyeonggi-do, 449-711, Korea
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Chung Chil
System LSI Division, Samsung Electronics Co., Yongin, Gyeonggi-do, 449-711, Korea
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Choi Yong
System LSI Division, Samsung Electronics Co., Yongin, Gyeonggi-do, 449-711, Korea
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Kang Sung
System LSI Division, Samsung Electronics Co., Yongin, Gyeonggi-do, 449-711, Korea
関連論文
- Highly Reliable Flash Cell for Low Power Application
- Highly Reliable Flash Cell for Low Power Application