Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-06-25
著者
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Yu Byoung
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Yoon Sung
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Ryu Sang
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Lee Seung
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Choi Kyu
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Lee Nam
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
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Park Young
It Convergence And Components Laboratory Electronics And Telecommunications Research Institute (etri
関連論文
- Phase Transition Characteristics and Device Performance of Sn-doped Ge_2Sb_2Te_5 in Phase Change Random Access Memory
- Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)
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