Surface passivations of AlGaN/GaN HEMTs using remote-mode PECVD (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

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AlGaN/GaN HEMT has received much attention for high-frequency and high-power applications for its excellent material properties. The reduction of surface trap effects is one of the most important points of AlGaN/GaN HEMT fabrication. In recent years, excellent results using the SiN_x surface passivation and field-plate structures have been reported. Because of the field-plate located on the SiN_x, the film quality is very important. And the plasma sensitive AlGaN/GaN surface, the remote-mode SiN_x deposition can be useful for GaN-based devices passivation. For the ohmic contact, the high temperature (over 800℃) alloy process is commonly used and such process can damage or contaminate AlGaN/GaN surface. And 'the early surface passivation process' can enhance the AlGaN/GaN HEMT performances by reducing damage or contamination. So the deposition should be low damage process. In this paper, the SiN_x film using the remote-mode plasma enhanced chemical vapor deposition successfully deposited with low damage, high thermal-stability (up to 900℃). And the surface-trap related current collapse of the 0.4μm AlGaN/GaN HEMTs is effectively reduced.
2007-06-18