High-Performance 2,8-Difluoro-5,11-bis(triethylsilylethynyl) Anthradithiophene Thin-Film Transistors Facilitated by Predeposited Ink-Jet Blending

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概要

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• We report high-performance ink-jet-printed 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistors (OTFTs) facilitated by polymer blending. The film morphology and crystal structure of diF-TESADT films were greatly improved by printing on a predeposited poly(\alpha-methyl styrene) (P\alphaMS) layer possibly due to the confined droplet area and thus increased intermolecular interactions. Additionally, partial dewetting and the formation of irregular film shapes were effectively controlled resulting in uniform and improved device performance in the predeposited blending system. Through a proper optimization of printing parameters such as substrate temperature and processing solvent, diF-TESADT TFTs with an average field-effect mobility of 0.34\pm 0.13 cm²V^-1s^-1(max 0.64 cm²V^-1s^-1) and subthreshold slope of 0.456\pm 0.090 V decade^-1have been achieved.

• 2013-03-25

著者

• Han Jeong

  Department Of Applied Chemistry Faculty Of Science Science University Of Tokyo

• Park Sung

  School Of Biological Sciences And Institute Of Microbiology Seoul National University

• Kim Yong-Hoon

  Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Lim Chang-Yoon

  Department of Chemical and Biochemical Engineering, Dongguk University---Seoul, Seoul 100-715, Korea

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• High-Performance 2,8-Difluoro-5,11-bis(triethylsilylethynyl) Anthradithiophene Thin-Film Transistors Facilitated by Predeposited Ink-Jet Blending

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