Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate
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概要
- 論文の詳細を見る
This work presents a novel method entitled "device transfer by backside etching (DTBE)" for transferring thin-film devices from Si wafers to a glass or plastic substrate. First, high performance poly-Si thin-film transistors (TFTs) were fabricated on a Si wafer and then adhered to glass or plastic substrates. The remaining Si was removed delicately using wafer backside chemical-mechanical polishing (CMP) and wet chemical etching. The devices after transferring exhibit comparable electrical characteristics to the original ones on Si substrates. The new transfer scheme has quite attractive applications for fabricating high-quality displays on low-cost substrates with low melting temperatures.
- Japan Society of Applied Physicsの論文
- 2003-09-15
著者
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Wang Shuo-cheng
Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University
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YEH Ching-Fa
Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University
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HUANG Chien-Kai
Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University
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DAI Yuan-Tung
Electronics Research & Service Organization of Industrial Technology Research Institute
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Dai Yuan-Tung
Electronics Research & Service Organization of Industrial Technology Research Institute, Bldg. 15, Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
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Wang Shuo-Cheng
Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.
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Yeh Ching-Fa
Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.
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Huang Chien-Kai
Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.
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