Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate

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概要

• 論文の詳細を見る

• A novel method that makes it possible to transfer thin-film devices from Si wafers to glass or plastic substrate has been investigated. First, high performance poly-Si TFTs were fabricated on the Si wafer and then adhered to glass or plastic substrates. The remaining Si was removed delicately using wafer backside CMP and wet chemical etching. The transferred devices exhibit no electrical degradation or yield loss. Therefore, for high-quality display application on low-melting temperature substrates, the novel transfer technique is quite attractive because of no process temperature limitation and the fully compatibility with conventional CMOS technology.

• 社団法人電子情報通信学会の論文
• 2002-06-24

著者

• Wang Shuo-cheng

  Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University

• YEH Ching-Fa

  Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University

• HUANG Chien-Kai

  Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University

• DAI Yuan-Tung

  Electronics Research & Service Organization of Industrial Technology Research Institute

• Yeh C‐f

  National Chiao‐tung Univ. Hsinchu Twn

• Dai Yuan-tung

  Electronics Research & Service Organization Of Industrial Technology Research Institute

• Wang Shin-chung

  Electrical Engineering Department National Tsing-hua University

• Huang Chien-kai

  Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University

関連論文

• Low-Temperature-Processed Poly-Si Thin-Film Transistors Using Solid-Phase-Crystallized and Liquid-Phase-Deposited Gate Oxide
• Experimental Comparison of Off-State Current between High-Temperature- and Low-Temperature-Processed Undoped Channel Polysilicon Thin-Film Trarnsistors
• Novel Barrier Dielectric Liner Prepared by Liquid-Phase Deposition and NH_3-Plasma Annealing
• Novel Sidewall Capping for Degradation-Free Damascene Trenches of Low-Permittivity Methylsilsesquioxane
• Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate
• Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate
• Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate
• The Characterization of Al_2O_3 Prepared by Anodic Oxidation
• Leakage Current Conduction Mechanism of Liquid Phase Deposited (LPD)SiO_2 Film
• Highly Reliable Liquid-Phase-Deposited SiO_2 with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors
• Structure Recovery and Motion Estimation from Stereo Motion (Special Issue on Computer Vision)
• Excellent Quality of SiO_2 Dielectric Film Prepared by Room-Temperature Ion Plating and Its Application to Thin-Film Transistors
• Improved I-V Characteristics of Polysilicon Thin Film Transistors with Novel Dual-Buffer Drain Structure
• Impact of Air Filter Material on Metal Oxide Semiconductor (MOS) Device Characteristics in HF Vapor Environment
• Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate

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