Improved I-V Characteristics of Polysilicon Thin Film Transistors with Novel Dual-Buffer Drain Structure
スポンサーリンク
概要
- 論文の詳細を見る
ON/OFF current ratio of poly-Si TFTs has been improved by using a novel structure called the dual-buffer drain (DBD). The new DBD TFT not only reduces the anomalous off-current, but also maintains a high on-current. It mainly combines features of the double-gate and the field-induced drain structures, so that owns advantages of low electric field near the drain junction and good drain junction characteristics. Furthermore, it will be shown that the DBD TFT is superior in off-current stability to the FID TFT. Finally, we will discuss high voltage operation for the DBD TFT.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
YEH Ching-Fa
Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University
-
Yeh Ching-fa
Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University
-
Chern Chyi-hsiang
Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University
関連論文
- Low-Temperature-Processed Poly-Si Thin-Film Transistors Using Solid-Phase-Crystallized and Liquid-Phase-Deposited Gate Oxide
- Novel Barrier Dielectric Liner Prepared by Liquid-Phase Deposition and NH_3-Plasma Annealing
- Novel Sidewall Capping for Degradation-Free Damascene Trenches of Low-Permittivity Methylsilsesquioxane
- Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate
- Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate
- Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate
- Leakage Current Conduction Mechanism of Liquid Phase Deposited (LPD)SiO_2 Film
- Highly Reliable Liquid-Phase-Deposited SiO_2 with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors
- Excellent Quality of SiO_2 Dielectric Film Prepared by Room-Temperature Ion Plating and Its Application to Thin-Film Transistors
- Improved I-V Characteristics of Polysilicon Thin Film Transistors with Novel Dual-Buffer Drain Structure
- Impact of Air Filter Material on Metal Oxide Semiconductor (MOS) Device Characteristics in HF Vapor Environment
- Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate