Highly Reliable Liquid-Phase-Deposited SiO_2 with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors

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概要

• 論文の詳細を見る

• Low-temperature (〜300℃) N_2O-plasma post-treatment for liquid-phase-deposited (LPD) gate oxide has been proposed for the first time. This treatment successfully takes the place of conventional furnace annealing in O_2 ambient. Results of physicochemical and electrical characteristics show that N_2O-plasma post-treated LPD-SiO_2 has a high electrical breakdown field and low interface state density. In addition. N_2O-plasma treatment also improves the Si-rich phenomenon of LPD-SiO_2. From the comparison with pure N_2 O-plasma-plasma oxidation film, LPD-SiO_2 with its short re-oxidation time in N_2O-plasma plays an important role in relieving interfacial stress. Finally, the novel technology is applied to the gate oxide of low-temperature-processed (LIP) polysilicon thin film transistors (poly-Si IFFs). The device performance reveals excellent electrical characteristics, and the reliability shows a satisfactory result, as well as the gate oxide reliability. It is believed that the N_2O-plasma post-treatment not only improves the oxide quality, but also effectively passivates the trap states of poly-Si TFTs

• 社団法人応用物理学会の論文
• 2002-10-15

著者

• YEH Ching-Fa

  Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University

• Lu Cheng-yu

  Department Of Electronics Engineering National Chiao Tong University

• Chen Tai-ju

  Department Of Electronics Engineering National Chiao Tong University

• Chen D

  United Microelectronics Corp. Hsin‐chu Twn

• Chen Tai-ju

  Department Of Electronics Engineering & Institute Of Electronics National Chiao-tung University

• Yeh Ching-fa

  Department Of Electronics Engineering National Chiao Tong University

• Liu Chung

  Department Of Electronics Engineering National Chiao Tong University

• CHEN Darren

  Department of Electronics Engineering, National Chiao Tong University

• LEE Su-Tseng

  Department of Electronics Engineering, National Chiao Tong University

• LIU Cheng-Hong

  Department of Electronics Engineering, National Chiao Tong University

• Chen Darren

  Department Of Electronics Engineering National Chiao Tong University

• Lee Su-tseng

  Department Of Electronics Engineering National Chiao Tong University

• Liu Chung

  Department of Electrical Engineering, Yuan Ze University, 320, Chung Li, Taiwan, Republic of China

関連論文

• Low-Temperature-Processed Poly-Si Thin-Film Transistors Using Solid-Phase-Crystallized and Liquid-Phase-Deposited Gate Oxide
• Novel Barrier Dielectric Liner Prepared by Liquid-Phase Deposition and NH_3-Plasma Annealing
• Novel Sidewall Capping for Degradation-Free Damascene Trenches of Low-Permittivity Methylsilsesquioxane
• Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate
• Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate
• Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate
• Leakage Current Conduction Mechanism of Liquid Phase Deposited (LPD)SiO_2 Film
• Highly Reliable Liquid-Phase-Deposited SiO_2 with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors
• Feasibility Study of ZnO/Ge Bilayer Recording Medium in Blue Laser Recordable Disc
• Excellent Quality of SiO_2 Dielectric Film Prepared by Room-Temperature Ion Plating and Its Application to Thin-Film Transistors
• Improved I-V Characteristics of Polysilicon Thin Film Transistors with Novel Dual-Buffer Drain Structure
• Impact of Air Filter Material on Metal Oxide Semiconductor (MOS) Device Characteristics in HF Vapor Environment
• Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate

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