The electrochemical behavior of mononitrophenyltrimethylsilanes and 2,4-dinitrophenyltrimethylsilane.
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概要
- 論文の詳細を見る
The CV data for <I>o</I>-, <I>m</I>-, and <I>p</I>-nitrophenyltrimethylsilanes and 2,4-dinitrophenyltrimethylsilane revealed that the former three show <I>E</I><SUB>pe</SUB> slightly more anodic than the corresponding nitrotoluenes; the latter shows a third peak (O<SUB>3</SUB>) together with two successive reversible couples, while the methyl analogue exhibits no peak corresponding to O<SUB>3</SUB>, but shows extremely weak O<SUB>1</SUB>. The behavior of these silyl compounds are interpreted in terms of less electron-donating nature of trimethylsilyl group and (p-d)π bonding between the siliicon and benzene ring.
- 公益社団法人 日本化学会の論文
著者
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Matsumoto Hideyuki
Department Of Applied Chemistry Faculty Of Engineering Gunma University
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Watanabe Hamao
Department Of Chemistry (materials Science) Faculty Of Engineering Gunma University
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Sato Takeo
Department Of Allergy And Immunological Diseases Tokyo Metropolitan Komagome Hospital
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Nagai Yoichiro
Department of Applied Chemistry, Faculty of Engineering Gunma University
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Aoki Masafumi
Department of Applied Chemistry, Faculty of Engineering Gunma University
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Matsumoto Hideyuki
Department of Applied Chemistry, Faculty of Engineering Gunma University
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Watanabe Hamao
Department of Applied Chemistry, Faculty of Engineering Gunma University
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