Reading and writing operations of memory device in micro-electromechanical resonator
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概要
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Micro-electromechanical resonators substantially exhibit bistable and hysteretic response when nonlinear characteristics appear. Badzey et al. reported that the nonlinear micro-electromechanical resonators can be used as a mechanical 1bit memory. Based on their results, the authors propose reading and writing operations of the memory device. The reading and writing operations imply a displacement measurement and a switching of two stable periodic vibrations, respectively. In this paper, we realize a displacement measurement along an approach avoiding supplemented sensors. In addition, we achieve the switching operation between two coexisting periodic states by a displacement feedback control.
著者
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Yao Atsushi
Department Of Cardiology Tokyo University Hospital
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Hikihara Takashi
Department Of Electrical Engineering Kyoto University
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Yao Atsushi
Department of Electrical Engineering, Kyoto University
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Hikihara Takashi
Department of Electric Engineering, Kyoto University
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