新しいマイクロ波プラズマ化学気相堆積装置

概要

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We have developed a new chemical vapour deposition system using a cavity type microwave discharge method to avoid the damage caused by plasma bombardment. The deposition region containing the substrate is separated from the discharge region by using a coaxial line type microwave CW discharge tube that can confine the discharge plasma in a predetermined region. Ar gas is fed into the outer tube of a coaxial double quartz tube and Ar gas plasma is created by microwave power. By the inner tube, SiH4 gas is concentrically introduced into the Ar gas plasma through the discharge tube, without a silicon deposition on the quartz tube wall. SiH<SUB>4</SUB> gas is dissociated and flows into deposition region. Then, Si thin films are fabricated on the substrate out of the discharge plasma.<BR>The deposition rate is several to tens Å/s. Very uniform Si thin films are fabricated over a circle with a 10 cm diameter while keeping the substrate at about 10 cm from the discharge tube end. The structure of the films is amorphous. The optical band gap is 1.8 to 2.4 eV.
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