マイクロ波プラズマCVD法におけるSiH4の解離度

概要

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The degree of dissociation of SiH4 gas in the microwave plasma CVD system has been obtained. By means of attaching a glass pipe on the gas sampling orifice, it has been shown that the fragments from SiH4, SiHn (n=03), can be excluded and that only SiH4 molecules are extracted from a dissociated Ar/SiH4 mixture gas to the mass spectrometer. The degree of dissociation of SiH4 gas is evaluated from the ratio of the mass spectral line intensities that are measured with microwave discharges on and off. Using the glass pipes of different length, the degree of dissociation of SiH4 gas is measured at the different points of a chamber. The degree of dissociation of SiH4 gas is from 40% to 70% and the radial distribution of it in the deposition chamber of this microwave plasma CVD system is very uniform.
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