Improvement of ArF Photo Resist Pattern by VUV Cure(Lithography-Related Techniques,<Special Section>Fundamentals and Applications of Advanced Semiconductor Devices)
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概要
- 論文の詳細を見る
The dry etching resistance of ArF resist patterns was improved by irradiating vacuum ultraviolet (VUV) light with a wavelength of 172nm to ArF resist patterns in N_2 atmosphere. The density of C=O bonds of the resists is decreased, and the dry etching rate of resist is also decreased after VUV irradiation. The line width shrinkage by the electron beam irradiation of CD-SEM was greatly improved from 9nm to 2nm, and LER (Line Edge Roughness) of resist patterns was approximately 2nm improved from 8.4nm to 6.5nm under VUV irradiation. Using VUV cure, the dry etching pattern of a SiN film showed a rectangle-like cross-sectional view, and indicated almost the same LER value as the resist mask pattern. The VUV cure technique is an attractive method of fine resist pattern fabrication by ArF lithography.
- 一般社団法人電子情報通信学会の論文
- 2007-05-01
著者
-
Ito Takashi
Department Of Chemistry School Of Science The University Of Tokyo
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Miyatake Hisakazu
Advanced Planning (tokyo) Electronic Components And Device Development Group Sharp Corporation
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