X線トポグラフィによるSi結晶表面下の格子歪の解析

概要

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Abstract The X-ray reflection topography under simultaneously stimulated total reflection is applied to analyze the lattice distortion just beneath the Si surface. Contrast change of the lattice distortion caused by the heat-treatment at the edge of the nitrogen ion implanted region silicon was evaluated contrast change from a systematic topographs taken at angles around the Bragg diffraction.The lattice distortion generated by annealing at the edge of the oxide film is also evaluated. The ratio of the contrast at the edge of implanted region over the averaged intensity of specimen is evaluated by transparented light intensity of films.And these ratios in a systematic topographs around the Bragg diffraction are plotted against the angles at which the topographs are taken. From this plot the difference in diffraction angle between average diffraction and edge contrast is obtained as 20" at the inner region and 15" at the outer region.
宮崎大学の論文
2006-08-30