パルスレーザー照射ゲッタリングのESCAによる評価

概要

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The pulse laser gettering of silicon wafer is studied using the ESCA of high precision. After a pulse laser irradiation from the back surface, specimens are annealed at l000℃ for 30min, and the intentional Cu diffusion are applied to the specimens. The gettered amount of Cu atoms at several depths in the wafers are measured. From the measurement, it was found that the gettering defect induced by the pulse laser are intentionally formed at the depth of 400μm and 500μm from the surface. In this sample, mild getter sinks are formed at the depth of 500μm in the central part, while mighty getter sinks are formed at the depth of 400μm in a off center place. It is estimated that, though the depth where the sinks are induced are reproducible, the site where the sinks are induced are not reproducible. As the amount of Cu gettered at 200μm is obviously reduced after the gettering procedure, it is estimated that Cu atoms near surface are drawn into the mighty getter sinks inside the wafer.
宮崎大学の論文
2009-09-30