化学的気相成長法窒化膜によるSi結晶中の格子欠陥の研究

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Abstract Dielectric silicon nitride (Si3N4) films is widely used materials for semiconductor device technology. Si3N4 films deposited by a plasma chemical vapor deposition (CVD) process are found to be under a high intrinsic tensile stress. In the present study, lattice defects such as precipitates, stacking faults and dislocations induced in the CZ-Si substrate surface with plasma CVD Si3N4 film were investigated by transmission-electron-microscope (TEM), scanning-electron microscope (SEM) and etching method. Two kinds of samples, (a) silicon substrate with plasma CVD Si3N4 film and (b) bare silicon. were prepared as specimens. These wafers were subjected to single step isothermal annealing and two-step annealing. Lattice defects were intentionally created by first step annealing at temperatures ranging from 1000℃ to 1200℃ and two-step annealing at 650℃ and 1050℃. Oxygen precipitates were observed in (a) and stacking faults were observed in (b).The effect of annealing temperature on defect formation was studied by means of preferential etching method. From diffraction contrast analysis by X-ray diffraction method, some characters of generated dislocations and line defects along the <100> direction are described.
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