低エネルギーNイオン注入Siのアニール効果と表面格子歪の評価

概要

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Czochralski-grown Si(100) wafers with a stripe of oxide film are implanted by N+ accelerated at 8keV and at 1.5keV to the dose of 1xl0(15)cm-2 . Lattice distortions produced by the implantation are observed bythe X-ray reflection topography under simultaneously stimulated total reflection. The contrast caused by thelattice expansions is observed in the implanted region of as-implanted specimen. This contrast is disappearedafter the annealing at 700°C and the other contrast is appeared at the edge of the implanted region. This newcontrast is identified to be caused by the increase in lattice spacing from the systematic topographs takenaround the Bragg reflection. It is confirmed that the increase in lattice spacing can be recovered after the90min annealing at 700°C.
宮崎大学の論文
2006-08-30