Development of Low Temperature Ultrahigh Vacuum Atomic Force Microscope/Scanning Tunneling Microscope
スポンサーリンク
概要
- 論文の詳細を見る
A low temperature ultrahigh vacuum atomic force microscope (UHV-AFM) has been developed, which allows the sample to be cooled from room temperature to lower than 29 K during observation and can be attached to the conventional UHV-AFM. Atom resolved non-contact atomic force microscopy (NC-AFM) images of the Si(100) surface were obtained at 120 K and 50 K using the produced low temperature UHV-AFM/STM, and the Si(100) dimer structure was successfully observed for the first time by NC-AFM. It was found that the Si(100)-c(4×2) structure mainly covered the area at 120 K, but the p(2×2) structure area increased at 50 K.
- 社団法人応用物理学会の論文
- 2000-06-30
著者
-
KITAMURA Shin-ichi
JEOL Limited, Musashino
-
IWATSUKI Masashi
JEOL Ltd.
-
Mooney C
Jeol Usa Inc. Ma Usa
-
MOONEY Charles
JEOL USA, Inc.
-
Mooney Charles
Jeol Usa
-
SUZUKI Katsuyuki
JEOL Ltd.
-
Iwatsuki Masashi
Jeol Ltd
関連論文
- Atomic Force Microscopy Utilizing SubAngstrom Cantilever Amplitudes (特集1 プロダクションテクノロジー研究会)
- Scanning Tunneling Microscopy Observation of the Formation of the Smallest Dimer-Adatom-Stacking-fault Domain on a Quenched Si(111) Surface
- Detection of the flip-flop motion of buckled dimers on a Ge(001) surface by STM
- Little Influence of Kinks on the Formation of c(4×2)Domains in a Si(001)Surface at Low Temperature
- Measurement of Terrace Width Distribution on an Si(110) Surface Using High-Temperature Scanning Tunneling Microscopy
- Scanning Tunneling Microscopy Observation of Ar-Ion-Bombarded Si(001) Surfaces and Regrowth Processes by Thermal Annealing
- Adsorption of Bismuth on Si(110) Surfaces Studied by Scanning Tunneling Microscopy
- Dynamic Observation of Ag Desorptiom Process onm Si(111) Surface by High-Termperature Scanning Tunneling Mieroscopy
- High-Temperature Scanning Tunneling Microscopy Observation of a (15, 17, 1) Facet Structure on a Si(110) Surface
- High-Temperature Scanning Tunneling Microscopy Study of the Phase Transition of 16-Structure Appearing on a Si(110) Surface
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- Surface Superstructures Fluctuating in the Quasi-One-Dimensional Organic Conductor β-(BEDT-TTF)_2PF_6 Observed by Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Scanning Capacitace Microscope/Atomic Force Microscope/Scanning Tunneling Microscope Study of Ion-Implanted Silicon Surfaces
- Adsorption and Desorption of AlCl_3 on Si(111)7×7 Observed by Scanning Tunneling Microscopy and Atomic Force Microscopy
- Observation of Ion-Trapping in Single Bunch Operation at the Photon Factory Storage Ring : Nuclear Science, Plasmas and Electric Discharges
- Higher-Order-Mode Damping Coupler for Beam Instability Suppression
- AC Mode Feedback and Gate Pulse Acquisition Methods for Scanning Near-Field Optical Microscope
- Low-Energy Electron Diffraction and Scanning Tunneling Microscopy Study on the Reconstruction of the Vanadium (111) Surface
- Mapping Contact Potential Differences with Noncontact Atomic Force Microscope Using Resonance Frequency Shift versus Sample Bias Voltage Curves
- Low-Temperature Electron Microscopy of a Bi_2(Sr, Ca)_3Cu_2O_x Superconductor
- Development of Low Temperature Ultrahigh Vacuum Atomic Force Microscope/Scanning Tunneling Microscope
- Development of High-Resolution Imaging of Solid–Liquid Interface by Frequency Modulation Atomic Force Microscopy
- Scanning Tunneling Microscopy Study of the 16-Structure Appearing on a Si(110) Surface
- Observation of Silicon Surfaces Using Ultrahigh-Vacuum Noncontact Atomic Force Microscopy
- Observation of 7×7 Reconstructed Structure on the Silicon (111) Surface using Ultrahigh Vacuum Noncontact Atomic Force Microscopy
- Observation of Silicon Surface Using Ultrahigh Vacuum Noncontact Atomic Force Microscope
- Scanning Tunneling Microscopy of Clean Silicon Surfaces at Elevated Temperatures
- AC Mode Feedback and Gate Pulse Acquisition Methods for Scanning Near-Field Optical Microscope
- Measurement of Terrace Width Distribution on an Si(110) Surface Using High-Temperature Scanning Tunneling Microscopy