Direct Etching of Resists by UV Light
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概要
- 論文の詳細を見る
Etching characteristics of some positive working resists by means of ultraviolet light irradiation were evaluated. Degradable resist polymers were found to be etched effectively in a room atmosphere and at a comparatively low temperature. The pure PMIPK [poly (methyl isopropenyl ketone)] showed that the greatest etching rate and fine resist patterns could be obtained directly by the UV-etching method. It is pointed out that the UV-etching method can be applied, as the simplest dry method, to making resist patterns as well as to ashing the resists.
- 社団法人応用物理学会の論文
- 1981-10-05
著者
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Ueno Nobuo
Department Of Applied Physics Tohoku University
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Ueno Nobuo
Department Of Image Science And Engineering Faculty Of Engineering Chiba University
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Konishi Shinji
Department Of Image Science And Engineering Faculty Of Engineering Chiba University
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Sugita Kazuyuki
Department Of Image Science And Engineering Faculty Of Engineering Chiba University
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Sugita Kazuyuki
Department Of Image Science And Engineering Chida University
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TANIMOTO Keisuke
Department of Image Science and Engineering, Faculty of Engineering, Chiba University
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Tanimoto Keisuke
Department Of Image Science And Engineering Faculty Of Engineering Chiba University
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Sugita Kazuyuki
Department of Graphic Engineering, Faculty of Engineering, Chiba University
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