Direct Patterning of Spin-on-Glass Materials by ArF Excimer Laser Irradiation and Their New Application to Hard-mask Processes

概要

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Several spin-on-glass (SOG) materials were examined as single layer resists for ArF excimer laser lithography, with the goal of directly forming a hard mask from these materials for dry-etching underlying metal films. Perhydro-silazane (PHSN) was found to be photo-reactive at 193 nm wavelength as well as polyphenylmethyl-silsesquioxane (PMSQ) and polyhydroxybenzyl-silsesquioxane (HSQ), which we have reported previously. These materials showed a sufficient resolution performance and sensitivity at 193 nm. The Fourier-transform infrared (FTIR) and X-ray photoelectron spectrometry (XPS) analyses showed that the basic reaction is photo-oxidation, though the imaging mechanism in each material is quite different. The etching resistance of these materials was significantly improved by special treatment after patterning, whereas those without the treatment were insufficient. For example, etching rate of PHSN after baking in steam ambient was comparable to that for CVD SiO_2 in RIE using SF_6 gas. 0.2 μm patterns were transferred into poly-Si films by dry-etching using these materials as hard masks.
社団法人応用物理学会の論文
1996-12-30