Radical Generation Mechanism and Radical Effect on Aluminum Anisotropic Etching in SiCl_4 Reactive Ion Etching

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1987-09-20

著者

• ARITA Yoshinobu

  NTT LSI Laboratories

• Yoshikawa Akira

  Ntt Electrical Communications Laboratories

• SATO Masaaki

  NTT Electrical Communications Laboratories

• NAKAMURA Hiroaki

  NTT Electrical Communications Laboratories

• ARITA Yoshinobu

  NTT Electrical Communications Laboratories

関連論文

• TiN Thin Film Prepared by Chermical Vapor Deposition Method Using Cp_2Ti(N_3)_2
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• O_2 Plasma Etch Rate Reduction on Synchrotron Radiation Exposed PMMA Film
• Radical Generation Mechanism and Radical Effect on Aluminum Anisotropic Etching in SiCl_4 Reactive Ion Etching
• Effect of Silicon Surface Cleaning on the Initial Stage of Selective Titanium Silicide Chemical Vapor Deposition
• Accelerated-Deposition Rate and High-Quality Film Copper Chemical Vapor Deposition Using a Water Vapor Addition to a Hydrogen and Cu(HFA)_2 Reaction System
• Selective Deposition of Silicon Oxide Using a Plasma-Fluorinated Resist Mask : Surfaces, Interfaces and Films
• Plasma-Enhanced Chemical Vapor Deposition of Copper
• Al-Cu Alloy Etching Using In-Reactor Aluminum Chloride Formation in Static Magnetron Triode Reactive Ion Etching
• Step Smoothing by Radical and Ion Assisted Chemical Vapor Deposition
• Effect of Gas Species on the Depth Reduction in Silicon Deep-Submicron Trench Reactive Ion Etching
• Reactive Ion Etching of Copper Films in SiCl_4 and N_2 Mixture
• Novel Static Magnetron Triode Reactive Ion Etching

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