Accelerated-Deposition Rate and High-Quality Film Copper Chemical Vapor Deposition Using a Water Vapor Addition to a Hydrogen and Cu(HFA)_2 Reaction System
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概要
- 論文の詳細を見る
Accelerated-deposition-rate chemical vapor deposition (CVD) of copper is studied using hydrogen reduction of bis-hexafluoro acetylacetonate copper (Cu(HFA)_2). An in-situ hydrated Cu(HFA)_2 formation system using gaseous H_2O addition to the hydrogen carrier gas increases the deposition rate to 90 um/min. This is about ten times larger than that of the conventional reaction system. It also improves the surface morphology and the electrical resistivity of the deposited copper film. A high-aspect-ratio via filling by selective CVD and excellent step coverage by blanket CVD are successfully obtained with this technique.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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ARITA Yoshinobu
NTT LSI Laboratories
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AWAYA Nobuyoshi
Process Development Center, Integrated Circuits Group, SHARP Corporation
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Awaya N
Sharp Corp. Hiroshima Jpn
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Awaya Nobuyoshi
Ntt Lsi Laboratories
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Awaya Nobuyoshi
Process Development Center Integrated Circuits Group Sharp Corporation
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