Selective Deposition of Silicon Oxide Using a Plasma-Fluorinated Resist Mask : Surfaces, Interfaces and Films
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The characteristics of plasma-fluorinated resist as a deposition preventive mask for the selective deposition of silicon oxide is investigated. It is shown that the surface energy of conventional photoresist is markedly decreased by NF_3 plasma. This fluorinated resist mask accomplishes the selective deposition of silicon oxide by the hydrolysis reaction of SiCl_4.
- 社団法人応用物理学会の論文
- 1988-07-20
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