Reactive Ion Etching of Copper Films in SiCl_4 and N_2 Mixture

スポンサーリンク

概要

• 論文の詳細を見る

• Reactive ion etching of Cu films in SiCl_4 and N_2 is proposed for the fabrication of copper interconnection lines in LSIs. Cu films can be etched using a wafer heated to at least 250℃. Adding N_2 to SiCl_4 has two advantages. One is that it prevents the etching rate of Cu between narrow pattern spaces from decreasing because it removes organic material on Cu films near resist patterns. The other is that it forms protective films such as SiN on the side walls of Cu patterns and prevents side etching. The side wall taper is controlled by changing the N_2 flow percentage.

• 社団法人応用物理学会の論文
• 1989-06-20

著者

• ARITA Yoshinobu

  NTT LSI Laboratories

• Ohno Kazuhide

  Ntt Lsi Laboratories

• SATO Masaaki

  NTT LSI Laboratories

関連論文

• TiN Thin Film Prepared by Chermical Vapor Deposition Method Using Cp_2Ti(N_3)_2
• プラズマ化学気相成長による選択チタンシリサイド膜堆積とシリサイド張り付けシリコン電極形成プロセス〔英文〕
• Radical Generation Mechanism and Radical Effect on Aluminum Anisotropic Etching in SiCl_4 Reactive Ion Etching
• Effect of Silicon Surface Cleaning on the Initial Stage of Selective Titanium Silicide Chemical Vapor Deposition
• Accelerated-Deposition Rate and High-Quality Film Copper Chemical Vapor Deposition Using a Water Vapor Addition to a Hydrogen and Cu(HFA)_2 Reaction System
• Selective Deposition of Silicon Oxide Using a Plasma-Fluorinated Resist Mask : Surfaces, Interfaces and Films
• Plasma-Enhanced Chemical Vapor Deposition of Copper
• Al-Cu Alloy Etching Using In-Reactor Aluminum Chloride Formation in Static Magnetron Triode Reactive Ion Etching
• Effect of Gas Species on the Depth Reduction in Silicon Deep-Submicron Trench Reactive Ion Etching
• Reactive Ion Etching of Copper Films in SiCl_4 and N_2 Mixture
• Novel Static Magnetron Triode Reactive Ion Etching

もっと見る 閉じる

スポンサーリンク