Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum Alloy

スポンサーリンク

概要

• 論文の詳細を見る
• 1996-08-26

著者

• Kobayashi Toshio

  NTT LSI Laboratories

• Awaya Nobuyoshi

  Ntt Lsi Laboratories

関連論文

• A 0.25-μm BiCMOS Technology Using SOR X-Ray Lithography (Special Issue on Quarter Micron Si Device and Process Technologies)
• Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO_2(3.5nm)-Si Interface by the Conductance Technique
• Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum Alloy
• Preamorphization of the Channel Region of MOS Devices for Shallow Counter Doping
• Accelerated-Deposition Rate and High-Quality Film Copper Chemical Vapor Deposition Using a Water Vapor Addition to a Hydrogen and Cu(HFA)_2 Reaction System
• Selective Deposition of Silicon Oxide Using a Plasma-Fluorinated Resist Mask : Surfaces, Interfaces and Films
• Plasma-Enhanced Chemical Vapor Deposition of Copper

スポンサーリンク