Preamorphization of the Channel Region of MOS Devices for Shallow Counter Doping

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Miyake Masayasu

  Ntt Lsi Laboratories

• OKAZAKI Yukio

  NTT Lifestyle and Environmental Technology Laboratorie

• Okazaki Yukio

  Ntt Lsi Laboratories

• Kobayashi Toshio

  NTT LSI Laboratories

関連論文

• Characteristics of Fingerprint Sensing on Capacitive Fingerprint Sensor LSIs with a Grounded Wall Structure
• A 0.25-μm BiCMOS Technology Using SOR X-Ray Lithography (Special Issue on Quarter Micron Si Device and Process Technologies)
• Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO_2(3.5nm)-Si Interface by the Conductance Technique
• Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum Alloy
• Preamorphization of the Channel Region of MOS Devices for Shallow Counter Doping
• Capacitance-Voltage Characteristics of Buried-Channel MOS Capacitors with a Structure of Subquarter-Micron pMOS
• Characteristics of Fingerprint Sensing on Capacitive Fingerprint Sensor LSIs with a Grounded Wall Structure

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