Step Smoothing by Radical and Ion Assisted Chemical Vapor Deposition

スポンサーリンク

概要

• 論文の詳細を見る

• A novel step smooting method called radical and ion assisted chemical vapor deposition (RID), is proposed. In this method, plasma chemical vapor deposition and reactive ion etching occur simultaneously on the surface. The bias sputtering and RID methods are compared and RID is found to provide better step coverage. A silicon oxide deposition experiment is performed in a planar diode-type reactor to verify this method. Experimentation shows that smooth step coverage with rounded edges is obtained for films at room temperature, while high quality films are fabricated at 400℃.

• 社団法人応用物理学会の論文
• 1986-09-20

著者

• SATO Masaaki

  NTT Electrical Communications Laboratories

• ARITA Yoshinobu

  NTT Electrical Communications Laboratories

関連論文

• Radical Generation Mechanism and Radical Effect on Aluminum Anisotropic Etching in SiCl_4 Reactive Ion Etching
• Step Smoothing by Radical and Ion Assisted Chemical Vapor Deposition

スポンサーリンク