Resistance Anomaly of Nb-Si Thin Films
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概要
- 論文の詳細を見る
A resistance anomaly of very thin Nb-Si films is reported. The anomaly is characterized by a sudden drop in the resistance by a factor of 〜10^3 at a temperature (T_D) of 〜180K without any application of pressure. The lower resistance-state (〜zeroΩ) is constant to 4.2K so far as we measured. T_D depends on measuring current and on magnetic fields. The anomaly has properties very similar to those of CuCl under high pressure.
- 社団法人応用物理学会の論文
- 1983-08-20
著者
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Obara Kozo
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kagoshima University
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Ogushi Tetsuya
Department Of Electronics Faculty Of Engineering Kagoshima University
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Obara Kozo
Department Of Electronics Faculty Of Engineering Kagoshima University
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ANAYAMA Takeshi
Department of Electric Engineering, Tohoku University
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Anayama Takeshi
Department Of Electric Engineering Tohoku University
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Obara Kozo
Department of Electrical and Electronic Engineering, Kagoshima University, Korimoto 1-21-40, Kagoshima 890, Japan
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