Nb_3Ge Prepared by High Rate Sputtering in a Container Cooled by Liquid N_2

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概要

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• Nb_3Ge has been prepared by high rate magnetron sputtering followed by quenching just after deposition. A superconducting onset temperature (T_<on>) above 21〜22 K was obtained over a wideband of a substrate temperature (T_D) 600゜〜750℃ and that of Ar pressure (P_r) from 0.1 Torr to 0.5 Torr. The highest T_<on>, T_c (the midpoint of transition) and the transition width were 22.5 K, 21.5 K and 1.5 K respectively. The preparation of a uniform and reproducible sample has become very easy. Associated physical properties of a film are described.

• 社団法人応用物理学会の論文
• 1980-10-05

著者

• Kaneko Yoshiro

  Department Of Anesthesia Nihon University Nerima Hikarigaoka Hospital

• Kaneko Yoshiro

  Department Of Electronics Faculty Of Engineering Kagoshima University

• Watanabe Takumi

  Department Of Electronics Faculty Of Engineering Kagoshima University

• HAKURAKU Yoshinori

  Department of Electronics, Kagoshima University

• Ogushi Tetsuya

  Department Of Electronics Faculty Of Engineering Kagoshima University

• Yuda Masahiro

  Department Of Electronics Faculty Of Engineering Kagoshima University

• NUMATA Tadashi

  Department of Electronics, Faculty of Engineering, Kagoshima University

• Numata Tadashi

  Department Of Electronics Faculty Of Engineering Kagoshima University

• Hakuraku Yoshinori

  Department Of Electronics Faculty Of Engineering Kagoshima University

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