Nanometer-Area Electron Diffraction of Interfaces of Semiconductor Superlattices : Techniques, Instrumentations and Measurement
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A new method for analyzing interfaces of semiconductor superlatttices such as GaAs/Ga_<1-x>Al_xAs is reported: An electron probe of 1-2 nm Is size of formed in a transmission electron microscope is incident in the [100] direction on a {110} cleaved crystal of the superlattices and scanned around the interfaces like the cross-sectional observation. The nanometer-area diffraction patterns are recorded continuously by scanning the probe. The local compositional and structural information of the interfaces in the superlattices can be obtained using the method.
- 社団法人応用物理学会の論文
- 1988-03-20
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