Determination of the Dominant Nonradiative Recombination Parameters in Heavily Si-Doped GaAs/AlGaAs Multiple Quantum Well Structures

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概要

• 論文の詳細を見る

• The trap density, electron and hole capture rates f the dominant nonradiative recombination recombination center in heavily Si-doped ([Si]=1.6×10^<19> cm^<-3>) GaAs/Al_<0.22>Ga_<0.78>As multiple quantum well structures were detemined by examining the excitation power dependence of time-resolved photo luminescence characterisitcs. Sufficient power excitation allowed us to observe the increase of the band emission lifetime due to the trap-filling effect. A theoretical analysis based on the deep-level statistics agreed fairly well with the experiment, which revealed the recombination mechanism in such a heavily doped condition for the first time.

• 社団法人応用物理学会の論文
• 1991-05-15

著者

• Kamata Norihiko

  Department Of Electronic Engineering University Of Tokyo

• Kamata Norihiko

  Department Of Electronics Faculty Of Engineering Saitama University

• Yamada K

  Department Of Electronics Faculty Of Engineering Saitama University

• Patel Suryakant

  Department Of Electronics Faculty Of Engineering Saitama University

• Yamada Koji

  Department Of Food Science And Technology Faculty Of Agriculture 46-09 Kyushu University

• Yamada Koji

  Deparment Of Food Science And Technology Faculty Of Agriculture Kyushu University

• Kanoh Eiji

  Department of Electronics, Faculty of Engineering, Saitama University

• Kanoh Eiji

  Department Of Electronics Faculty Of Engineering Saitama University

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