Vapor Phase Epitaxial Growth of Highly Conductive P-Type ZnSe Films with Codoping of P and Li

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概要

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• Highly conductive p-type ZnSe films were grown at 450-500℃ onto (100)GaAs by vapor phase epitaxy with codoping of P and Li. Vapors of Zn, Se and impurities were transported separately to the vicinity of the substrates. Hall effect measurement revealed that p-type films were degenerate. When either only P or Li was doped, the resistivity was very high and its conductivity type was unknown. The SIMS analysis showed a uniform profile of both impurities in the p-type epitaxial film: the Li concentration was estimated as 10^<19> cm^<-3>; P was an order of 10^<18> cm^<-3> with the aid of EPMA.

• 社団法人応用物理学会の論文
• 1990-11-20

著者

• Watanabe Toshio

  Department Of Gastroenterology Osaka City University Graduate School Of Medicine

• Muranoi Tetsuo

  Department Of Electronics Faculty Of Engineering Ibaraki University

• Muranoi Tetsuo

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Ibaraki University

• Furukoshi Mitsuo

  Department Of Electronics Faculty Of Engineering Ibaraki University

• Fujita Yasuhiro

  Department Of Electronics Faculty Of Engineering Ibaraki University

• ISHII Nobunao

  Department of Electronics, Faculty of Engineering, Ibaraki University

• MOTO Yoshinori

  Department of Electronics, Faculty of Engineering, Ibaraki University

• Ishii Nobunao

  Department Of Electronics Faculty Of Engineering Ibaraki University

• Moto Yoshinori

  Department Of Electronics Faculty Of Engineering Ibaraki University

• Watanabe Toshio

  Department Of Electronics Faculty Of Engineering Ibaraki University

• Watanabe Toshio

  Department Of Chemistry University Of Tsukuba

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