Vapor Phase Homo- and Heteroepitaxies of ZnSe Films

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概要

• 論文の詳細を見る

• The effect of hydrogen chloride (HCl) gas on homo- and heteroepitaxies of ZnSe was investigated. As-grown (100) ZnSe/(100)GaAs and chemically etched (100)GaAs were used as substrates. Thermal etching of the substrate in HCl gas flow was carried out for 5 min at various temperatures (200-400℃) prior to the film growth at 350℃. Homo- and heteroepitaxies occurred after thermal etching above 250℃ and 200℃ respectively. In the case of the heteroepitaxial film, a very smooth surface was obtained and a streaky reflection high energy electron diffraction (RHEED) pattern was observed. A sharp I_x line was predominant in the photoluminescence (PL) spectrum.

• 社団法人応用物理学会の論文
• 1991-12-01

著者

• Muranoi Tetsuo

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Ibaraki University

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