Growth and Properties of Low-Resistivity n-Type ZnSe Crystals Grown from the Melt with Excess Zn under Argon Pressure
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概要
- 論文の詳細を見る
This paper describes a technique for growing low-resistivity n-type ZnSe crystals from the melt under pressure and the electrical and optical properties of the crystals. The low-resistivity ZnSe crystals are grown from the melt with excess Zn of 3 to 9.3 mol%. The resistivity of the crystals is of the order of 0.1 Ω・cm and the electron Hall mobility is 220 to 380cm^2/Vs. Near-band-edge emission is observed from the low-resistivity ZnSe crystals at room temperature in photoluminescence measurement.
- 社団法人応用物理学会の論文
- 1985-12-20
著者
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Kikuma Isao
Department Of Electrical And Electronic Engineering College Of Engineering Ibaraki University
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Furukoshi Mitsuo
Department Of Electronics Faculty Of Engineering Ibaraki University
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