$\beta$-FeSi2 Single Crystals Grown from Solution
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概要
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We have grown high-quality $\beta$-FeSi2 bulk single crystals by a temperature gradient solution growth method using Ga solvent. Polyhedral shaped bulk crystals with clear facet planes were obtained below the growth temperature of 900°C@. Laue observation confirmed that crystals are high-quality single crystals without twins. Full-width at half maxim of the X-ray rocking curve at $\beta$-FeSi2 (800) reflection was 53 arcsec. The conduction was p-type and the resistivity was 0.03–0.04 $\Omega$cm at room temperature.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-15
著者
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Kikuma Isao
Department Of Electrical And Electronic Engineering College Of Engineering Ibaraki University
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Udono Haruhiko
Department Of Electrical And Electronic Engineering College Of Engineering Ibaraki University
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Udono Haruhiko
Department of Electrical and Electronic Engineering, Faculty of Engineering, Ibaraki Univerity, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
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