Growth and Properties of ZnSe Crystals by a Modified Bridgman Method
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概要
- 論文の詳細を見る
Zinc selenide crystals are grown from the melt by a modified Bridgman method under argon pressure. The electrical and optical properties of the as-grown crystals are measured as a function of the temperature of a Zn reservoir which produces a vapor of a specific Zn partial pressure. Low-resistivity n-type crystals of 0.2 to 2Ω・cm are grown at the temperature of the Zn reservoir above 960℃. Electron Hall mobility of the crystals decreases with increasing temperature of the Zn reservoir during growth. A mobility value of 550 cm^2/V・s is obtained at room temperature (290 K). The extra Zn partial pressure enhances a bound-exciton line and suppresses deep-level emission bands around 500 and 600 nm in photoluminescence spectra at 10 K.
- 社団法人応用物理学会の論文
- 1991-11-15
著者
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KIKUMA Isao
Department of Electrical and Electronic Engineering, Ibaraki University
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Matsuo Masatoshi
Department Of Cardiology Saiseikai Fukuoka General Hospital
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Matsuo Masatoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Ibaraki University:(prese
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Kikuma Isao
Department Of Electrical And Electronic Engineering College Of Engineering Ibaraki University
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KOMURO Toyokazu
Department of Electrical and Electronic Engineering, Faculty of Engineering, Ibaraki University
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Komuro T
Ibaraki Univ. Hitachi
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Komuro Toyokazu
Department Of Electrical And Electronic Engineering Faculty Of Engineering Ibaraki University
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