In Situ Annealing of Melt-Grown ZnSe Crystals under Zn Partial Pressure

スポンサーリンク

概要

• 論文の詳細を見る

• Zinc selenide crystals are grown from the melt by a modified Bridgman method under argon pressure. A specific Zn partial pressure over the melt is maintained during growth by heating Zn in a reservoir. Grown crystals are annealed in situ in a crucible under Zn partial pressure. The annealed crystals exhibit n-type conduction. Electrical properties of the annealed crystals are affected by annealing temperature and Zn reservoir temperature. Low-resistivity crystals have a resistivity of 0.3 to 3 Ω・cm. The electron mobility is 260 to 560 cm^2/V・s at room temperature. The electron mobility of the annealed crystals is also dependent on the Zn reservoir temperature during growth.

• 社団法人応用物理学会の論文
• 1992-05-01

著者

• Matsuo Masatoshi

  Department Of Cardiology Saiseikai Fukuoka General Hospital

• Matsuo Masatoshi

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Ibaraki University:(prese

• Komuro Toyokazu

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Ibaraki University

• KIKUTA Isao

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Ibaraki University

• Kikuta Isao

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Ibaraki University

関連論文

• OJ-163 The absolute value of D-dimer is helpful for discrimination Acute Aortic Dissection/Acute Pulmonary Embolism from Acute Myocardial Infarction(Thromboembolism / Antithrombotic therapy / Thrombolysis(02)(H),Oral Presentation (Japanese),The 72nd Annua
• Growth and Properties of ZnSe Crystals by a Modified Bridgman Method
• In Situ Annealing of Melt-Grown ZnSe Crystals under Zn Partial Pressure

スポンサーリンク