Temperature Distribution near the Growing Vapor-Crystal Interface in Piper-Polich Method

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概要

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• The relation between the growth rate and the temperature gradient of a furnace in Piper-Polich method is theoretically analyzed on the basis of a simple model which takes heat transfer into consideration. The model is applied to the growth of II-VI compounds. The temperature gradient at the growing vapor-crystal interface in a crucible is strongly affected by the liberation of the latent heat of crystallization. The critical growth rate which makes the temperature gradient of vapors at the interface zero is given approximately by (λ_s/△H) dT/dx|furnace. The activity gradient at the interface is discussed.

• 社団法人応用物理学会の論文
• 1975-03-05

著者

• Kikuma Isao

  Department Of Electronics Faculty Of Engineering Ibaraki University

• Kikuma Isao

  Department Of Electrical And Electronic Engineering College Of Engineering Ibaraki University

• FURUKOSHI Mitsuo

  Department of Electronics, Faculty of Engineering, Ibaraki University

• Furukoshi Mitsuo

  Department Of Electronics Faculty Of Engineering Ibaraki University

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