Observation of Etch Pits of $\beta$-FeSi2 Single Crystals
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概要
- 論文の詳細を見る
We have observed etch pits of p-type $\beta$-FeSi2 single crystals grown by the temperature gradient solution growth method. Characteristic etch pits which depend on the surface orientation of the crystals were observed on the surface etched by diluted hydrofluoric acid and $\text{HF}:\text{HNO$_{3}$}:\text{H$_{2}$O}=1:2:2\text{--}8$ solutions. These etchants are suitable for the observation of etch pits and surface orientation of $\beta$-FeSi2 single crystals.
- 2001-06-15
著者
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Kikuma Isao
Department Of Electrical And Electronic Engineering College Of Engineering Ibaraki University
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Udono Haruhiko
Department Of Electrical And Electronic Engineering College Of Engineering Ibaraki University
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Kikuma Isao
Department of Electrical and Electronics, Faculty of Engineering, Ibaraki Univerity, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
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Udono Haruhiko
Department of Electrical and Electronics, Faculty of Engineering, Ibaraki Univerity, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
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