Effect of Zn Partial Pressure during Growth on Electrical Properties of ZnSe Crystals Grown from the Melt
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概要
- 論文の詳細を見る
This paper describes the melt growth of ZnSe crystals by a modified Bridgman method under argon pressure. A definite Zn partial pressure over the melt is maintained by controlling the temperature of a Zn zeservoir. Electrical properties of as-grown crystals depend on the temperature of the reservoir. Low-resistivity n-type crystals are obtained when the temperature of the reservoir is kept above 1040℃ during growth. The resistivity of the crystals is 0.2 to 5Ω・cm and the Hall mobility is 380 to 500 cm^2/V・s at room temperature (290±5 K). The temperature of the Zn reservoir during the cooling process after solidification also affects the electrical properties.
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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Kikuma Isao
Department Of Electrical And Electronic Engineering College Of Engineering Ibaraki University
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Furukoshi Mitsuo
Department Of Electronics Faculty Of Engineering Ibaraki University
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Kikuchi Atsushi
Department Of Electronics Faculty Of Engineering Ibaraki University:(present Address) Texas Instrume
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